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NE851M03-A Технические параметры

CEL  NE851M03-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 3Pins
Supplier Device Package SOT-363
Collector-Emitter Breakdown Voltage 5.5V
Current-Collector (Ic) (Max) 100mA
hFEMin 100
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 200mW
Base Part Number NE851
Element Configuration Single
Power - Max 200mW
Transistor Type NPN
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 1V
Voltage - Collector Emitter Breakdown (Max) 5.5V
Frequency - Transition 4.5GHz
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.9dB ~ 2.5dB @ 2GHz
RoHS Status RoHS Compliant
Просмотр сходства

NE851M03-A Документы

NE851M03-A brand manufacturers: CEL, Anli stock, NE851M03-A reference price.CEL. NE851M03-A parameters, NE851M03-A Datasheet PDF and pin diagram description download.You can use the NE851M03-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE851M03-A pin diagram and circuit diagram and usage method of function,NE851M03-A electronics tutorials.You can download from the Anli.