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NE851M13-T3-A Технические параметры
CEL NE851M13-T3-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 5.5V | |
| Number of Elements | 1 Element | |
| Packaging | Cut Tape (CT) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 140mW | |
| Frequency | 6.5GHz | |
| Base Part Number | NE851 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 140mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 5.5V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA 1V | |
| Gain | 4dB ~ 5.5dB @ 2GHZ | |
| Max Breakdown Voltage | 5.5V | |
| Frequency - Transition | 4.5GHz | |
| Collector Base Voltage (VCBO) | 9V | |
| Emitter Base Voltage (VEBO) | 1.5V | |
| Continuous Collector Current | 100mA | |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NE851M13-T3-A Документы
- DatasheetsNE851M13 NE851M13-T3-A-CEL-datasheet-87531.pdf
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