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NE851M33-A Технические параметры
CEL NE851M33-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, Flat Lead | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 5.5V | |
| Number of Elements | 1 Element | |
| hFEMin | 100 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 130mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 6.5GHz | |
| Base Part Number | NE851 | |
| Element Configuration | Single | |
| Power Dissipation | 130mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 5.5V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA 1V | |
| Frequency - Transition | 4.5GHz | |
| Collector Base Voltage (VCBO) | 9V | |
| Emitter Base Voltage (VEBO) | 1.5V | |
| Continuous Collector Current | 100mA | |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz | |
| RoHS Status | RoHS Compliant |
NE851M33-A Документы
- DatasheetsNE851M33
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