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NE851M33-T3-A Технические параметры

CEL  NE851M33-T3-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 5.5V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 130mW
Base Part Number NE851
Element Configuration Single
Power Dissipation 130mW
Transistor Type NPN
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 1V
Frequency - Transition 4.5GHz
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.9dB ~ 2.5dB @ 2GHz
RoHS Status RoHS Compliant
Просмотр сходства

NE851M33-T3-A Документы

NE851M33-T3-A brand manufacturers: CEL, Anli stock, NE851M33-T3-A reference price.CEL. NE851M33-T3-A parameters, NE851M33-T3-A Datasheet PDF and pin diagram description download.You can use the NE851M33-T3-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE851M33-T3-A pin diagram and circuit diagram and usage method of function,NE851M33-T3-A electronics tutorials.You can download from the Anli.