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NE85619-T1 Технические параметры

CEL  NE85619-T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Max Power Dissipation 100mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Base Part Number NE85619
Qualification Status Not Qualified
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA 10V
Gain 6.5dB ~ 12.5dB
Transition Frequency 4500MHz
Frequency - Transition 4.5GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.5pF
Noise Figure (dB Typ @ f) 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
RoHS Status Non-RoHS Compliant
Просмотр сходства

NE85619-T1 Документы

NE85619-T1 brand manufacturers: CEL, Anli stock, NE85619-T1 reference price.CEL. NE85619-T1 parameters, NE85619-T1 Datasheet PDF and pin diagram description download.You can use the NE85619-T1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE85619-T1 pin diagram and circuit diagram and usage method of function,NE85619-T1 electronics tutorials.You can download from the Anli.