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NE85630-T1 Технические параметры
CEL NE85630-T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Base Part Number | NE85630 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 150mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA 3V | |
| Gain | 6dB ~ 12dB | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Transition Frequency | 4500MHz | |
| Frequency - Transition | 4.5GHz | |
| Highest Frequency Band | L B | |
| Collector-Base Capacitance-Max | 1.5pF | |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz | |
| RoHS Status | Non-RoHS Compliant |
NE85630-T1 Документы
- DatasheetsNE856 Series
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