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NE85630-T1-R24-A Технические параметры

CEL  NE85630-T1-R24-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 12V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Base Part Number NE85630
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 150mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 7mA 3V
Gain 9dB
Frequency - Transition 4.5GHz
Collector Base Voltage (VCBO) 20V
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

NE85630-T1-R24-A Документы

NE85630-T1-R24-A brand manufacturers: CEL, Anli stock, NE85630-T1-R24-A reference price.CEL. NE85630-T1-R24-A parameters, NE85630-T1-R24-A Datasheet PDF and pin diagram description download.You can use the NE85630-T1-R24-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE85630-T1-R24-A pin diagram and circuit diagram and usage method of function,NE85630-T1-R24-A electronics tutorials.You can download from the Anli.