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NE85633-A Технические параметры
CEL NE85633-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Strip | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Pin Count | 3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA 10V | |
| Gain | 11.5dB | |
| Transition Frequency | 7000MHz | |
| Frequency - Transition | 7GHz | |
| Continuous Collector Current | 100mA | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 1pF | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz | |
| RoHS Status | RoHS Compliant |
NE85633-A Документы
- PCN Obsolescence/ EOLEOL 12/Aug/2016 EOL Revision 10/Nov/2016
Индекс :
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