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NE85633L-A Технические параметры
CEL NE85633L-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23 | |
| Weight | 1.437803g | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Current-Collector (Ic) (Max) | 100mA | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 200mW | |
| Base Part Number | NE85633 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Polarity | NPN | |
| Element Configuration | Single | |
| Power - Max | 200mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA 10V | |
| Gain | 9dB | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 7GHz | |
| Emitter Base Voltage (VEBO) | 3V | |
| Continuous Collector Current | 100mA | |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 1GHz | |
| RoHS Status | RoHS Compliant |
NE85633L-A Документы
- DatasheetsNE856 Series
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