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NE85633-T1B Технические параметры
CEL NE85633-T1B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 7GHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | NE85633 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power Dissipation | 200mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA 10V | |
| Gain | 9dB | |
| Transition Frequency | 7000MHz | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 1GHz | |
| RoHS Status | Non-RoHS Compliant |
NE85633-T1B Документы
- DatasheetsNE85633 / 2SC3356
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