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NE85633-T1B-A Технические параметры

CEL  NE85633-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 7GHz
Свойство продукта Значение свойства
Base Part Number NE85633
Pin Count 3
Configuration SINGLE
Power Dissipation 200mW
Output Power 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Gain 11.5dB
Transition Frequency 7000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

NE85633-T1B-A Документы

NE85633-T1B-A brand manufacturers: CEL, Anli stock, NE85633-T1B-A reference price.CEL. NE85633-T1B-A parameters, NE85633-T1B-A Datasheet PDF and pin diagram description download.You can use the NE85633-T1B-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE85633-T1B-A pin diagram and circuit diagram and usage method of function,NE85633-T1B-A electronics tutorials.You can download from the Anli.