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NE85634-T1-A Технические параметры

CEL  NE85634-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 12V
Max Power Dissipation 1.2W
Current Rating 100mA
Frequency 6.5GHz
Base Part Number NE85634
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 2W
Output Power 2mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Gain 9dB
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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NE85634-T1-A Документы

NE85634-T1-A brand manufacturers: CEL, Anli stock, NE85634-T1-A reference price.CEL. NE85634-T1-A parameters, NE85634-T1-A Datasheet PDF and pin diagram description download.You can use the NE85634-T1-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE85634-T1-A pin diagram and circuit diagram and usage method of function,NE85634-T1-A electronics tutorials.You can download from the Anli.