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NE85634-T1-RE-A Технические параметры

CEL  NE85634-T1-RE-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Supplier Device Package SOT-89
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Свойство продукта Значение свойства
Max Power Dissipation 1.2W
Base Part Number NE85634
Power - Max 1.2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 20mA 10V
Gain 9dB
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 6.5GHz
Collector Base Voltage (VCBO) 20V
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

NE85634-T1-RE-A Документы

NE85634-T1-RE-A brand manufacturers: CEL, Anli stock, NE85634-T1-RE-A reference price.CEL. NE85634-T1-RE-A parameters, NE85634-T1-RE-A Datasheet PDF and pin diagram description download.You can use the NE85634-T1-RE-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE85634-T1-RE-A pin diagram and circuit diagram and usage method of function,NE85634-T1-RE-A electronics tutorials.You can download from the Anli.