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NE856M02-T1-AZ Технические параметры
CEL NE856M02-T1-AZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Number of Elements | 1 Element | |
| hFEMin | 250 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 1.2W | |
| Frequency | 6.5GHz | |
| Base Part Number | NE856 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 1.2W | |
| Output Power | 1.2W | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA 10V | |
| Gain | 12dB | |
| Max Breakdown Voltage | 12V | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Continuous Collector Current | 100mA | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NE856M02-T1-AZ Документы
- PCN Obsolescence/ EOLEOL 12/Aug/2016 EOL Revision 10/Nov/2016
- PCN Assembly/OriginWafer Fab Transfer 25/Feb/2015
Индекс :
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