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NE97833-T1B-A Технические параметры

CEL  NE97833-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 50mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Frequency 5.5GHz
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 200mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 15mA 10V
Gain 10dB
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current -50mA
Noise Figure (dB Typ @ f) 2dB @ 1GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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NE97833-T1B-A Документы

NE97833-T1B-A brand manufacturers: CEL, Anli stock, NE97833-T1B-A reference price.CEL. NE97833-T1B-A parameters, NE97833-T1B-A Datasheet PDF and pin diagram description download.You can use the NE97833-T1B-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE97833-T1B-A pin diagram and circuit diagram and usage method of function,NE97833-T1B-A electronics tutorials.You can download from the Anli.