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NESG2030M04-A Технические параметры
CEL NESG2030M04-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Number of Pins | 4Pins | |
| Supplier Device Package | M04 | |
| Current-Collector (Ic) (Max) | 35mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Frequency | 60GHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NESG2030 | |
| Polarity | NPN | |
| Power Dissipation | 80mW | |
| Output Power | 60mW | |
| Power - Max | 80mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 2.3V | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 5mA 2V | |
| Gain | 16dB | |
| Voltage - Collector Emitter Breakdown (Max) | 2.3V | |
| Frequency - Transition | 60GHz | |
| Collector Base Voltage (VCBO) | 8V | |
| Emitter Base Voltage (VEBO) | 1.2V | |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.1dB @ 2GHz | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NESG2030M04-A Документы
- DatasheetsNESG2030M04
- PCN Obsolescence/ EOLMultiple Devices 04/Sep/2013
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