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NESG2030M04-T2-A Технические параметры
CEL NESG2030M04-T2-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 10V | |
| Packaging | Cut Tape (CT) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 150mW | |
| Frequency | 60GHz | |
| Base Part Number | NESG2030 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Output Power | 60mW | |
| Power - Max | 80mW | |
| Transistor Type | NPN | |
| Max Collector Current | 65mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 5mA 2V | |
| Gain | 16dB | |
| Voltage - Collector Emitter Breakdown (Max) | 2.3V | |
| Max Breakdown Voltage | 2.3V | |
| Collector Base Voltage (VCBO) | 8V | |
| Emitter Base Voltage (VEBO) | 1.2V | |
| Continuous Collector Current | 35mA | |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.1dB @ 2GHz | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NESG2030M04-T2-A Документы
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