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NESG2046M33-T3-A Технические параметры

CEL  NESG2046M33-T3-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 5V
Current-Collector (Ic) (Max) 40mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 130mW
Свойство продукта Значение свойства
Frequency 18GHz
Base Part Number NESG2046
Element Configuration Single
Transistor Type NPN
Max Collector Current 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 2mA 1V
Gain 9.5dB ~ 11.5dB
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 40mA
Noise Figure (dB Typ @ f) 0.8dB ~ 1.5dB @ 2GHz
RoHS Status RoHS Compliant

NESG2046M33-T3-A Документы

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