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NESG2101M05-A Технические параметры
CEL NESG2101M05-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Number of Pins | 4Pins | |
| Supplier Device Package | M05 | |
| Collector-Emitter Breakdown Voltage | 5V | |
| Current-Collector (Ic) (Max) | 100mA | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Max Power Dissipation | 500mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NESG2101 | |
| Polarity | NPN | |
| Output Power | 500mW | |
| Power - Max | 500mW | |
| Transistor Type | NPN | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 15mA 2V | |
| Gain | 11dB ~ 19dB | |
| Voltage - Collector Emitter Breakdown (Max) | 5V | |
| Frequency - Transition | 17GHz | |
| Emitter Base Voltage (VEBO) | 1.5V | |
| Continuous Collector Current | 35mA | |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NESG2101M05-A Документы
- DatasheetsNESG2101M05
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