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NESG2107M33-A Технические параметры

CEL  NESG2107M33-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 5V
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 130mW
Свойство продукта Значение свойства
Base Part Number NESG2107
Power - Max 130mW
Transistor Type NPN
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 5mA 1V
Gain 7dB ~ 10dB
Frequency - Transition 10GHz
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 0.9dB ~ 1.5dB @ 2GHz
RoHS Status RoHS Compliant
Просмотр сходства

NESG2107M33-A Документы

NESG2107M33-A brand manufacturers: CEL, Anli stock, NESG2107M33-A reference price.CEL. NESG2107M33-A parameters, NESG2107M33-A Datasheet PDF and pin diagram description download.You can use the NESG2107M33-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NESG2107M33-A pin diagram and circuit diagram and usage method of function,NESG2107M33-A electronics tutorials.You can download from the Anli.