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NESG250134-T1-AZ Технические параметры

CEL  NESG250134-T1-AZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Supplier Device Package 3-PowerMiniMold
Collector-Emitter Breakdown Voltage 9.2V
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
hFEMin 80
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 1.5W
Frequency 900MHz
Base Part Number NESG2501
Polarity NPN
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 1.8W
Output Power 800mW
Power - Max 1.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 9.2V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 3V
Gain 23dB
Voltage - Collector Emitter Breakdown (Max) 9.2V
Max Frequency 10GHz
Max Breakdown Voltage 9.2V
Frequency - Transition 10GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2.8V
Continuous Collector Current 500mA
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NESG250134-T1-AZ Документы

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