Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
CEL NESG250134-T1-AZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Number of Pins | 3Pins | |
| Supplier Device Package | 3-PowerMiniMold | |
| Collector-Emitter Breakdown Voltage | 9.2V | |
| Current-Collector (Ic) (Max) | 500mA | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Packaging | Cut Tape (CT) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Max Power Dissipation | 1.5W | |
| Frequency | 900MHz | |
| Base Part Number | NESG2501 | |
| Polarity | NPN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 1.8W | |
| Output Power | 800mW | |
| Power - Max | 1.5W | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 9.2V | |
| Max Collector Current | 500mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA 3V | |
| Gain | 23dB | |
| Voltage - Collector Emitter Breakdown (Max) | 9.2V | |
| Max Frequency | 10GHz | |
| Max Breakdown Voltage | 9.2V | |
| Frequency - Transition | 10GHz | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 2.8V | |
| Continuous Collector Current | 500mA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |