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UPA806T-A Технические параметры

CEL  UPA806T-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка CEL
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 6V
hFEMin 75
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Base Part Number UPA806
Polarity NPN
Свойство продукта Значение свойства
Element Configuration Dual
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 6V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA 3V
Gain 8.5dB
Frequency - Transition 12GHz
Collector Base Voltage (VCBO) 9V
Emitter Base Voltage (VEBO) 2V
Continuous Collector Current 30mA
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

UPA806T-A Документы

UPA806T-A brand manufacturers: CEL, Anli stock, UPA806T-A reference price.CEL. UPA806T-A parameters, UPA806T-A Datasheet PDF and pin diagram description download.You can use the UPA806T-A Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find UPA806T-A pin diagram and circuit diagram and usage method of function,UPA806T-A electronics tutorials.You can download from the Anli.