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NE662M16-T3 Технические параметры

CEL (California Eastern Laboratories)   NE662M16-T3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Material Si
EU RoHS Not Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 15
Maximum Collector-Emitter Voltage (V) 3.3
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 1.5
Maximum DC Collector Current (A) 0.035
Maximum DC Collector Current Range (A) 0.001 to 0.06
Maximum Emitter Cut-Off Current (nA) 200
Maximum Collector Cut-Off Current (nA) 200
Operational Bias Conditions 2V/20mA
Minimum DC Current Gain 50@5mA@2V
Minimum DC Current Gain Range 50 to 120
Свойство продукта Значение свойства
Maximum Power Dissipation (mW) 115
Maximum Power 1dB Compression (dBm) 11(Typ)
Typical Power Gain (dB) 20
Maximum 3rd Order Intercept Point (dBm) 22(Typ)
Maximum Transition Frequency (MHz) 25000(Typ)
Maximum Noise Figure (dB) 1.5
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.5
Package Width 0.8
Package Length 1.2
PCB changed 6
Supplier Package Case M-16
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 6
Configuration Single
Просмотр сходства
NE662M16-T3 brand manufacturers: CEL (California Eastern Laboratories) , Anli stock, NE662M16-T3 reference price.CEL (California Eastern Laboratories) . NE662M16-T3 parameters, NE662M16-T3 Datasheet PDF and pin diagram description download.You can use the NE662M16-T3 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NE662M16-T3 pin diagram and circuit diagram and usage method of function,NE662M16-T3 electronics tutorials.You can download from the Anli.