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2N2222A TIN/LEAD Технические параметры
Central 2N2222A TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Central | |
| Mount | Panel | |
| Package / Case | TO-18-3 | |
| RoHS | Non-Compliant | |
| Emitter- Base Voltage VEBO | 6 V | |
| Pd - Power Dissipation | 500 mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 35 at 0.1 mA, 10 V | |
| Collector-Emitter Saturation Voltage | 300 mV | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 2000 | |
| Mounting Styles | Through Hole | |
| Gain Bandwidth Product fT | 300 MHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Central Semiconductor | |
| Brand | Central Semiconductor | |
| Maximum DC Collector Current | - | |
| DC Current Gain hFE Max | 300 at 150 mA, 10 V | |
| Collector- Emitter Voltage VCEO Max | 40 V | |
| Series | 2N2222A | |
| Packaging | Bulk | |
| Subcategory | Transistors | |
| Technology | Si | |
| Configuration | Single | |
| Product Type | BJTs - Bipolar Transistors | |
| Power Consumption | 8.5 W | |
| Collector Base Voltage (VCBO) | 75 V | |
| Continuous Collector Current | 800 mA | |
| Product Category | Bipolar Transistors - BJT |
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