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2N3019 TIN/LEAD Технические параметры

Central  2N3019 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Central
Package / Case TO-39-3
Emitter- Base Voltage VEBO 7 V
Pd - Power Dissipation 800 mW
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 50 at 100 uA, 10 V
Collector-Emitter Saturation Voltage 200 mV
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 500
Mounting Styles Through Hole
Gain Bandwidth Product fT 100 MHz
Manufacturer Central Semiconductor
Свойство продукта Значение свойства
Brand Central Semiconductor
Maximum DC Collector Current -
DC Current Gain hFE Max 300 at 150 mA, 10 V
RoHS N
Collector- Emitter Voltage VCEO Max 80 V
Series 2N3019
Packaging Bulk
Subcategory Transistors
Technology Si
Configuration Single
Product Type BJTs - Bipolar Transistors
Collector Base Voltage (VCBO) 140 V
Continuous Collector Current 1 A
Product Category Bipolar Transistors - BJT
Просмотр сходства
2N3019 TIN/LEAD brand manufacturers: Central, Anli stock, 2N3019 TIN/LEAD reference price.Central. 2N3019 TIN/LEAD parameters, 2N3019 TIN/LEAD Datasheet PDF and pin diagram description download.You can use the 2N3019 TIN/LEAD Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N3019 TIN/LEAD pin diagram and circuit diagram and usage method of function,2N3019 TIN/LEAD electronics tutorials.You can download from the Anli.