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2N3707 Технические параметры
Central Semiconductor 2N3707 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Package / Case | TO-92 | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Collector-Emitter Saturation Voltage | 1V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 625mW | |
| hFEMin | 100 | |
| Published | 2012 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 150°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -65°C | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 100nA | |
| Transition Frequency | 100MHz | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 6V | |
| DC Current Gain-Min (hFE) | 100 | |
| RoHS Status | RoHS Compliant |
2N3707 Документы
- ReachStatementCentral-Semiconductor-company-41.pdf
- Datasheets2n3707-Y1RjT0dW-roNdPw6GZ.pdf
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