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2N4231A PBFREE Технические параметры
Central Semiconductor 2N4231A PBFREE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Package / Case | TO-66-2 | |
| Surface Mount | NO | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Transistor Polarity | NPN | |
| Collector- Emitter Voltage VCEO Max | 40 V | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 75 W | |
| Gain Bandwidth Product fT | 4 MHz | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 25 at 1.5 A, 2 V | |
| DC Current Gain hFE Max | 100 at 1.5 A, 2 V | |
| Factory Pack QuantityFactory Pack Quantity | 30 | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | METAL | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 4 MHz | |
| Manufacturer Part Number | 2N4231APBFREE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
| Risk Rank | 5.65 | |
| Series | 2N42 | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | O-MBFM-P2 | |
| Configuration | Single | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-66 | |
| Collector Base Voltage (VCBO) | 40 V | |
| Power Dissipation-Max (Abs) | 75 W | |
| Collector Current-Max (IC) | 5 A | |
| DC Current Gain-Min (hFE) | 4 | |
| Continuous Collector Current | 5 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| VCEsat-Max | 4 V | |
| Collector-Base Capacitance-Max | 300 pF |
Индекс :
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