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2N4856TIN LEAD Технические параметры
Central Semiconductor 2N4856TIN LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Surface Mount | NO | |
| Package / Case | TO-18-3 | |
| Material | Si | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| ECCN (US) | EAR99 | |
| Maximum Drain Source Voltage (V) | 40 | |
| Maximum Gate Source Voltage (V) | 40 | |
| Maximum Drain Gate Voltage (V) | 40 | |
| Maximum Power Dissipation (mW) | 360 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 200 | |
| Standard Package Name | TO-206-AA | |
| Supplier Package | TO-18 | |
| Military | No | |
| Mounting | Through Hole | |
| Package Height | 5.33(Max) | |
| PCB changed | 3 | |
| Lead Shape | Through Hole | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | 2N4856TIN/LEAD | |
| Package Shape | ROUND | |
| Manufacturer | Central Semiconductor Corp | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
| Risk Rank | 5.63 | |
| Pd - Power Dissipation | 360 mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 200 C | |
| Minimum Operating Temperature | - 65 C | |
| Drain-Source Current at Vgs=0 | 50 mA | |
| Mounting Styles | Through Hole | |
| Rds On - Drain-Source Resistance | 25 Ohms | |
| Vgs - Gate-Source Breakdown Voltage | 40 V | |
| Gate-Source Cutoff Voltage | 10 V | |
| Packaging | Box | |
| Series | 2N4856 | |
| JESD-609 Code | e0 | |
| Part Status | Active | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Technology | Si | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-MBCY-W3 | |
| Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-18 | |
| Drain-source On Resistance-Max | 25 Ω | |
| DS Breakdown Voltage-Min | 40 V | |
| Channel Type | N | |
| FET Technology | JUNCTION | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Feedback Cap-Max (Crss) | 8 pF | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Diameter | 5.84(Max) | |
| RoHS Status | RoHS non-compliant |
2N4856TIN LEAD Документы
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