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2N4900 TIN/LEAD Технические параметры

Central Semiconductor  2N4900 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Package / Case TO-66-2
RoHS N
Mounting Styles Through Hole
Transistor Polarity PNP
Collector- Emitter Voltage VCEO Max 80 V
Emitter- Base Voltage VEBO -
Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current -
Свойство продукта Значение свойства
Pd - Power Dissipation 25 W
Gain Bandwidth Product fT 3 MHz
DC Collector/Base Gain hfe Min 20
DC Current Gain hFE Max 150
Factory Pack QuantityFactory Pack Quantity 30
Series 2N4900
Packaging Tube
Configuration Single
Collector Base Voltage (VCBO) 80 V
Continuous Collector Current 1 A
Просмотр сходства
2N4900 TIN/LEAD brand manufacturers: Central Semiconductor, Anli stock, 2N4900 TIN/LEAD reference price.Central Semiconductor. 2N4900 TIN/LEAD parameters, 2N4900 TIN/LEAD Datasheet PDF and pin diagram description download.You can use the 2N4900 TIN/LEAD Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N4900 TIN/LEAD pin diagram and circuit diagram and usage method of function,2N4900 TIN/LEAD electronics tutorials.You can download from the Anli.