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Central Semiconductor 2N5179 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Package / Case | TO-72 | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 200mW | |
| hFEMin | 25 | |
| Packaging | Bulk | |
| Published | 2013 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Terminal Position | BOTTOM |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Frequency | 2GHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 2 GHz | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 50mA | |
| Gain | 15 dB | |
| Transition Frequency | 900MHz | |
| Frequency - Transition | 2GHz | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 2.5V | |
| Continuous Collector Current | 50mA | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |