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2N5322 TIN/LEAD Технические параметры

Central Semiconductor  2N5322 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Package / Case TO-39-3
RoHS N
Mounting Styles Through Hole
Transistor Polarity PNP
Collector- Emitter Voltage VCEO Max 75 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current -
Pd - Power Dissipation 10 W
Свойство продукта Значение свойства
Gain Bandwidth Product fT 50 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 30
DC Current Gain hFE Max 175
Factory Pack QuantityFactory Pack Quantity 500
Series 2N5322
Packaging Bulk
Configuration Single
Collector Base Voltage (VCBO) 100 V
Continuous Collector Current 2 A
Просмотр сходства
2N5322 TIN/LEAD brand manufacturers: Central Semiconductor, Anli stock, 2N5322 TIN/LEAD reference price.Central Semiconductor. 2N5322 TIN/LEAD parameters, 2N5322 TIN/LEAD Datasheet PDF and pin diagram description download.You can use the 2N5322 TIN/LEAD Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N5322 TIN/LEAD pin diagram and circuit diagram and usage method of function,2N5322 TIN/LEAD electronics tutorials.You can download from the Anli.