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2N5770 Технические параметры

Central Semiconductor  2N5770 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-92
Collector-Emitter Breakdown Voltage 15V
Number of Elements 1 Element
Power Dissipation (Max) 625mW
hFEMin 20
Published 2008
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.21.00.75
Terminal Position BOTTOM
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 900MHz
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 50mA
Transition Frequency 900MHz
Frequency - Transition 900MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
DC Current Gain-Min (hFE) 50
Continuous Collector Current 50mA
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.7pF
RoHS Status RoHS Compliant
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2N5770 Документы

2N5770 brand manufacturers: Central Semiconductor, Anli stock, 2N5770 reference price.Central Semiconductor. 2N5770 parameters, 2N5770 Datasheet PDF and pin diagram description download.You can use the 2N5770 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find 2N5770 pin diagram and circuit diagram and usage method of function,2N5770 electronics tutorials.You can download from the Anli.