Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2N6431 Технические параметры
Central Semiconductor 2N6431 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mount | Through Hole | |
| Package / Case | TO-18 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Saturation Voltage | 500mV | |
| Frequency(Max) | 50MHz | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 500mW | |
| hFEMin | 25 | |
| Packaging | Bulk | |
| Published | 2001 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Operating Temperature | 200°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -65°C | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Frequency | 50MHz | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 1.8W | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 50MHz | |
| Collector Emitter Voltage (VCEO) | 300V | |
| Max Collector Current | 100mA | |
| Transition Frequency | 50MHz | |
| Collector Base Voltage (VCBO) | 300V | |
| Emitter Base Voltage (VEBO) | 6V | |
| DC Current Gain-Min (hFE) | 50 | |
| Continuous Collector Current | 450mA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
2N6431 Документы
- ReachStatementCentral-Semiconductor-company-41.pdf
- Datasheets2n6431-anTcHr7M-yoDGPGl6q.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ