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BFY90 TIN/LEAD Технические параметры

Central Semiconductor  BFY90 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Package / Case TO-72-4
RoHS N
Transistor Polarity NPN
DC Collector/Base Gain hfe Min 25 at 2 mA, 1 V
Collector- Emitter Voltage VCEO Max 15 V
Emitter- Base Voltage VEBO 2.5 V
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
Mounting Styles Through Hole
Свойство продукта Значение свойства
Maximum DC Collector Current 50 mA
Pd - Power Dissipation 200 mW
Factory Pack QuantityFactory Pack Quantity 2000
Tradename 0
Series BFY90
Packaging Bulk
Operating Frequency 1.1 GHz
Configuration Single
Output Power -
Transistor Type Bipolar
Continuous Collector Current 25 mA
Просмотр сходства
BFY90 TIN/LEAD brand manufacturers: Central Semiconductor, Anli stock, BFY90 TIN/LEAD reference price.Central Semiconductor. BFY90 TIN/LEAD parameters, BFY90 TIN/LEAD Datasheet PDF and pin diagram description download.You can use the BFY90 TIN/LEAD Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFY90 TIN/LEAD pin diagram and circuit diagram and usage method of function,BFY90 TIN/LEAD electronics tutorials.You can download from the Anli.