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PN3569 TIN/LEAD Технические параметры

Central Semiconductor  PN3569 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Package / Case TO-92-3
RoHS N
Mounting Styles Through Hole
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 40 V
Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current -
Pd - Power Dissipation 625 mW
Gain Bandwidth Product fT 600 MHz
Свойство продукта Значение свойства
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 100 at 30 mA, 1 V
DC Current Gain hFE Max 300 at 150 mA, 1 V
Factory Pack QuantityFactory Pack Quantity 2500
Tradename 0
Series PN3569
Packaging Bulk
Configuration Single
Collector Base Voltage (VCBO) 80 V
Continuous Collector Current 500 mA
PN3569 TIN/LEAD brand manufacturers: Central Semiconductor, Anli stock, PN3569 TIN/LEAD reference price.Central Semiconductor. PN3569 TIN/LEAD parameters, PN3569 TIN/LEAD Datasheet PDF and pin diagram description download.You can use the PN3569 TIN/LEAD Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find PN3569 TIN/LEAD pin diagram and circuit diagram and usage method of function,PN3569 TIN/LEAD electronics tutorials.You can download from the Anli.