[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

PN4355 TIN/LEAD Технические параметры

Central Semiconductor  PN4355 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Package / Case TO-92-3
RoHS N
Mounting Styles Through Hole
Transistor Polarity PNP
Collector- Emitter Voltage VCEO Max 60 V
Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current -
Pd - Power Dissipation 625 mW
Gain Bandwidth Product fT 500 MHz
Свойство продукта Значение свойства
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 60 at 100 uA, 10 V
DC Current Gain hFE Max 400 at 10 mA, 19 V
Factory Pack QuantityFactory Pack Quantity 2500
Tradename 0
Series PN4355
Packaging Bulk
Configuration Single
Collector Base Voltage (VCBO) 60 V
Continuous Collector Current 500 mA
Просмотр сходства
PN4355 TIN/LEAD brand manufacturers: Central Semiconductor, Anli stock, PN4355 TIN/LEAD reference price.Central Semiconductor. PN4355 TIN/LEAD parameters, PN4355 TIN/LEAD Datasheet PDF and pin diagram description download.You can use the PN4355 TIN/LEAD Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find PN4355 TIN/LEAD pin diagram and circuit diagram and usage method of function,PN4355 TIN/LEAD electronics tutorials.You can download from the Anli.