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PN918 TIN/LEAD Технические параметры

Central Semiconductor  PN918 TIN/LEAD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Package / Case TO-72-4
RoHS N
Transistor Polarity NPN
DC Collector/Base Gain hfe Min 20 at 3 mA, 1 V
Collector- Emitter Voltage VCEO Max 15 V
Emitter- Base Voltage VEBO 3 V
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
Свойство продукта Значение свойства
Mounting Styles Through Hole
Pd - Power Dissipation 200 mW
Factory Pack QuantityFactory Pack Quantity 2500
Tradename 0
Series PN918
Packaging Bulk
Configuration Single
Transistor Type Bipolar
Continuous Collector Current 50 mA
Просмотр сходства
PN918 TIN/LEAD brand manufacturers: Central Semiconductor, Anli stock, PN918 TIN/LEAD reference price.Central Semiconductor. PN918 TIN/LEAD parameters, PN918 TIN/LEAD Datasheet PDF and pin diagram description download.You can use the PN918 TIN/LEAD Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find PN918 TIN/LEAD pin diagram and circuit diagram and usage method of function,PN918 TIN/LEAD electronics tutorials.You can download from the Anli.