Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2N5116 Технические параметры
Central Semiconductor Corp 2N5116 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Box | |
| Published | 2001 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8541.21.00.95 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 500mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power - Max | 500mW | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain-source On Resistance-Max | 150Ohm | |
| FET Technology | JUNCTION | |
| Feedback Cap-Max (Crss) | 7 pF | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V | |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1nA | |
| Resistance - RDS(On) | 150Ohm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ