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CBR1F-D020 Технические параметры
Central Semiconductor Corp CBR1F-D020 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Bridge Rectifiers | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 4-Circular, A Case | |
| Number of Pins | 4Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 2001 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Position | DUAL | |
| Pin Count | 4 | |
| Diode Type | Single Phase | |
| Current - Reverse Leakage @ Vr | 10μA @ 200V | |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 1A | |
| Output Current-Max | 1A | |
| Current - Average Rectified (Io) | 1A | |
| Forward Voltage | 1.3V | |
| Number of Phases | 1Phase | |
| Peak Non-Repetitive Surge Current | 50A | |
| Voltage - Peak Reverse (Max) | 200V | |
| Reverse Recovery Time-Max | 0.2μs | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
CBR1F-D020 Документы
- DatasheetsCBR1F-D0x0, CBR1F-D100 Series
- ReachStatementCentral-Semiconductor-company-41.pdf
- Environmental InformationRoHS3 Cert
- PCN Obsolescence/ EOLMult Dev OBS 6/Jun/2018
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