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Central Semiconductor Corp CTLDM7120-M832DS TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 6 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TDFN Exposed Pad | |
| Surface Mount | YES | |
| Current - Continuous Drain (Id) @ 25℃ | 1A Ta | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Reach Compliance Code | compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 1.65W | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 500mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Drain Current-Max (Abs) (ID) | 1A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.65W | |
| FET Feature | Logic Level Gate |