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BC858CW-G Технические параметры

Comchip Technology  BC858CW-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Comchip Technology
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Collector-Emitter Breakdown Voltage 30V
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN
Max Power Dissipation 150mW
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration Single
Power - Max 150mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BC858CW-G Документы

BC858CW-G brand manufacturers: Comchip Technology, Anli stock, BC858CW-G reference price.Comchip Technology. BC858CW-G parameters, BC858CW-G Datasheet PDF and pin diagram description download.You can use the BC858CW-G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC858CW-G pin diagram and circuit diagram and usage method of function,BC858CW-G electronics tutorials.You can download from the Anli.