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KBU3510-G Технические параметры

Comchip Technology  KBU3510-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Bridge Rectifiers
Марка Comchip Technology
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Through Hole
Package / Case 4-SIP, KBU
Diode Element Material SILICON
Number of Elements 4 Elements
Voltage Rated 50V
Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 2011
Tolerance 10%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature UL RECOGNIZED
HTS Code 8541.10.00.80
Capacitance 1μF
Свойство продукта Значение свойства
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSFM-W4
Configuration BRIDGE, 4 ELEMENTS
Diode Type Single Phase
Current - Reverse Leakage @ Vr 10μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 17.5A
Max Reverse Leakage Current 10μA
Max Surge Current 400A
Output Current-Max 35A
Current - Average Rectified (Io) 35A
Number of Phases 1Phase
Voltage - Peak Reverse (Max) 1kV
Breakdown Voltage-Min 1000V
Length 3.2004mm
Width 2.4892mm
Thickness 2.0066mm
RoHS Status ROHS3 Compliant

KBU3510-G Документы

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