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MBR20100CT-G Технические параметры

Comchip Technology  MBR20100CT-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка Comchip Technology
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Packaging Bulk
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Applications EFFICIENCY
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MBR20100CT
JESD-30 Code R-PSFM-T3
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100μA @ 100V
Voltage - Forward (Vf) (Max) @ If 950mV @ 20A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 10A
Max Reverse Voltage (DC) 100V
Average Rectified Current 20A
Number of Phases 1Phase
JEDEC-95 Code TO-220AB
Non-rep Pk Forward Current-Max 150A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 100μA
RoHS Status ROHS3 Compliant

MBR20100CT-G Документы

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