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MMBT2222A-G Технические параметры

Comchip Technology  MMBT2222A-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Comchip Technology
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Configuration SINGLE
Power - Max 300mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10mV
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
Turn Off Time-Max (toff) 285ns
Turn On Time-Max (ton) 35ns
RoHS Status ROHS3 Compliant
Просмотр сходства

MMBT2222A-G Документы

MMBT2222A-G brand manufacturers: Comchip Technology, Anli stock, MMBT2222A-G reference price.Comchip Technology. MMBT2222A-G parameters, MMBT2222A-G Datasheet PDF and pin diagram description download.You can use the MMBT2222A-G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBT2222A-G pin diagram and circuit diagram and usage method of function,MMBT2222A-G electronics tutorials.You can download from the Anli.