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MMBT2907A-G Технические параметры

Comchip Technology  MMBT2907A-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Comchip Technology
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 1.437803g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 600mA
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 350mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Element Configuration Single
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Transition Frequency 200MHz
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -600mA
Turn Off Time-Max (toff) 285ns
Turn On Time-Max (ton) 35ns
RoHS Status ROHS3 Compliant
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MMBT2907A-G Документы

MMBT2907A-G brand manufacturers: Comchip Technology, Anli stock, MMBT2907A-G reference price.Comchip Technology. MMBT2907A-G parameters, MMBT2907A-G Datasheet PDF and pin diagram description download.You can use the MMBT2907A-G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBT2907A-G pin diagram and circuit diagram and usage method of function,MMBT2907A-G electronics tutorials.You can download from the Anli.