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MMBT3906-G Технические параметры

Comchip Technology  MMBT3906-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Comchip Technology
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 200.998119mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Element Configuration Single
Power - Max 200mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -200mA
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
RoHS Status ROHS3 Compliant
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MMBT3906-G Документы

MMBT3906-G brand manufacturers: Comchip Technology, Anli stock, MMBT3906-G reference price.Comchip Technology. MMBT3906-G parameters, MMBT3906-G Datasheet PDF and pin diagram description download.You can use the MMBT3906-G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBT3906-G pin diagram and circuit diagram and usage method of function,MMBT3906-G electronics tutorials.You can download from the Anli.