ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

MMBT5551-G Технические параметры

Comchip Technology  MMBT5551-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Comchip Technology
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Factory Pack QuantityFactory Pack Quantity 3000
Package Description SMALL OUTLINE, R-PDSO-G3
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 30
Rohs Code Yes
Transition Frequency-Nom (fT) 100 MHz
Manufacturer Part Number MMBT5551-G
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Not Recommended
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD
Risk Rank 7.87
Свойство продукта Значение свойства
Series MMBT5551
Packaging MouseReel
JESD-609 Code e3
Type RF Bipolar Power
Terminal Finish TIN
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type Bipolar Power
Collector Current-Max (IC) 0.6 A
DC Current Gain-Min (hFE) 50
Collector-Emitter Voltage-Max 160 V
MMBT5551-G brand manufacturers: Comchip Technology, Anli stock, MMBT5551-G reference price.Comchip Technology. MMBT5551-G parameters, MMBT5551-G Datasheet PDF and pin diagram description download.You can use the MMBT5551-G Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MMBT5551-G pin diagram and circuit diagram and usage method of function,MMBT5551-G electronics tutorials.You can download from the Anli.