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SS8050-G Технические параметры
Comchip Technology SS8050-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Comchip Technology | |
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2016 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Max Power Dissipation | 300mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Power - Max | 300mW | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 400mV | |
| Max Collector Current | 1.5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | |
| Transition Frequency | 100MHz | |
| Max Breakdown Voltage | 25V | |
| Frequency - Transition | 100MHz | |
| RoHS Status | ROHS3 Compliant |
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