[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

CGHV31500F1 Технические параметры

Cree  CGHV31500F1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка Cree
Package / Case 440226-2
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Flange Mount
Pd - Power Dissipation 418 W
Maximum Operating Temperature + 75 C
Minimum Operating Temperature - 40 C
Maximum Drain Gate Voltage - 2.7 V
Id - Continuous Drain Current 500 mA
Свойство продукта Значение свойства
Vgs - Gate-Source Breakdown Voltage -
Vds - Drain-Source Breakdown Voltage -
Transistor Polarity N-Channel
RoHS N
Shipping Restrictions This product may require additional documentation to export from the United States.
Packaging Tray
Operating Frequency 2.7 GHz to 3.1 GHz
Output Power 57.9 dBm
Transistor Type HEMT
Gain -
Просмотр сходства
CGHV31500F1 brand manufacturers: Cree, Anli stock, CGHV31500F1 reference price.Cree. CGHV31500F1 parameters, CGHV31500F1 Datasheet PDF and pin diagram description download.You can use the CGHV31500F1 Transistors - JFETs, DSP Datesheet PDF, find CGHV31500F1 pin diagram and circuit diagram and usage method of function,CGHV31500F1 electronics tutorials.You can download from the Anli.