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CGHV35400F1 Технические параметры

Cree  CGHV35400F1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка Cree
Package / Case 440225
Shipping Restrictions This product may require additional documentation to export from the United States.
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 125 V
Vgs - Gate-Source Breakdown Voltage - 10 V, 2 V
Id - Continuous Drain Current 24 A
Свойство продукта Значение свойства
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Mounting Styles Flange Mount
Factory Pack QuantityFactory Pack Quantity 1
Vgs th - Gate-Source Threshold Voltage 3 V
Operating Frequency 2.9 GHz to 3.5 GHz
Output Power 400 W
Transistor Type HEMT
Gain 11 dB
Просмотр сходства
CGHV35400F1 brand manufacturers: Cree, Anli stock, CGHV35400F1 reference price.Cree. CGHV35400F1 parameters, CGHV35400F1 Datasheet PDF and pin diagram description download.You can use the CGHV35400F1 Transistors - JFETs, DSP Datesheet PDF, find CGHV35400F1 pin diagram and circuit diagram and usage method of function,CGHV35400F1 electronics tutorials.You can download from the Anli.